Burns Science And Technology Charter School
November 21, 2023
About Scitech Institute
These advantages make the TPMOS extra appropriate for being integrated with an SBD to reduce each conduction loss and switching loss. Therefore, the trench/planar 4H-SiC MOSFET built-in with SBD (TPSBD) is firstly proposed and studied. For the TPSBD, the static simulation outcomes present that the maximum reverse current without body diode turning on is 1320 A/cm2 within the third quadrant. In the double pulse check with a load current of 1000 A/cm2, the physique diode of the TPSBD is successfully suppressed.
However, the physique diodes of the other three MOSFETs turn on and contribute the 75{4ab6b815505e0e8839b52a7724d5aa8dc74c8c2c76e45856ab848d678c7b6ed9} of the freewheeling currents, even though an exterior SBD is anti-parallel with these MOSFETs. The body diodes still contribute 25{4ab6b815505e0e8839b52a7724d5aa8dc74c8c2c76e45856ab848d678c7b6ed9} of the freewheeling currents, despite the fact that the active area of the anti-parallel SBD increases three times. Compared with TMOS, DTMOS and TPMOS, the reverse restoration charge of the TPSBD reduces by 91{4ab6b815505e0e8839b52a7724d5aa8dc74c8c2c76e45856ab848d678c7b6ed9}, 88{4ab6b815505e0e8839b52a7724d5aa8dc74c8c2c76e45856ab848d678c7b6ed9} and 96{4ab6b815505e0e8839b52a7724d5aa8dc74c8c2c76e45856ab848d678c7b6ed9}, respectively.
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